The M29W128GH and M29W128GL are 128 Mbit (8 Mb x 16 or 16 Mb x 8) non-volatile Flash memories that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6 V) supply. On power-up the memory defaults to its Read mode.
0 x% k g: t3 c8 r
. g- p& l" @' b( n. _4 ^1 O6 o9 DThe memory array is divided into 64-Kword/128-Kbyte uniform blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Program and Erase commands are written to the command interface of the memory. An on-chip Program/Erase controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents.
6 A! H& J# H0 x' D5 ]* X- M
. e. @( e, G% F: Q V9 \' TThe end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.
+ ?) V3 Z" M- u
6 c7 s0 N; j! c! t" w B& A; ?Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory. They allow simple connection to most microprocessors, often without additional logic.
# V) P0 z) k. @4 e5 `4 ~: x. i1 {9 F6 m" O2 w& Q7 t
The M29W128GH and M29W128GL support Asynchronous Random Read and Page Read from all blocks of the memory array. The devices also feature a Write to Buffer Program capability that improves the programming throughput by programming in one shot a buffer of 32 words/64 bytes. The Enhanced Buffered Program feature is also available to speed up the programming throughput, allowing to program 256 words in one shot (only in x 16 mode). The VPP/WP signal can be used to enable faster programming of the device.
8 Z& H' @, D* y' i
* ?9 c' W! b5 e$ r$ h9 V9 |; sThe M29W128GH and M29W128GL have an extra block, the extended block, of 128 words in x 16 mode or of 256 bytes in x 8 mode that can be accessed using a dedicated command.
" Q/ W. H% a3 D) U; _. W
% Z1 s- z9 ?3 |% ^1 {7 s) cThe extended block can be protected and so is useful for storing security information.
6 v( g$ v, R' R3 l5 {/ I9 ]8 M/ a' M: z# C, X+ l, N
However the protection is not reversible, once protected the protection cannot be undone.
6 ^" t4 A' M; m2 x+ Z: l4 Y. u, ], ^8 ~& b
The device features different levels of hardware and software block protection to avoid unwanted program or erase (modify):
/ }) d) c, a, c; B% X" n2 f● Hardware protection:7 c, L1 b* C: Y& V0 F
– The VPP/WP provides a hardware protection of the highest and lowest block on the M29W128GH, M29W128GL, respectively.
. X2 Y% u' g* o) ^● Software protection:
/ T3 p" @! ^+ ?* v– Volatile protection2 j- E4 b( I5 b9 N4 }& g0 M2 y2 z2 H
– Non-volatile protection
1 b. Y, w& P4 L# f- ]# F* l, _0 p' s+ l– Password protection' ?) ^* A% h- ]3 n8 o. O
The M29W128GH and M29W128GL are offered in TSOP56 (14 x 20 mm), and TBGA64 (10 x 13 mm, 1 mm pitch), packages. The memories are delivered with all the bits erased (set to ‘1’).
. \/ d+ ?) v$ rMaximum Ratings
2 u! }2 n& W. t
/ ~& u( g' z1 z. v0 YSymbol Parameter Min Max Unit
/ c" @8 ]$ J+ e; {TBIAS Temperature under bias -50 125 ℃
; {4 C4 I" h3 r" ^5 h4 wTSTG Storage temperature -65 150 ℃
/ ~: Y& [7 U, _% |VIO Input or output voltage(1)(2) −0.6 VCC + 0.6 V
. M7 x, _, h9 M; @8 FVCC Supply voltage −0.6 4 V! z9 Y+ U, R/ p$ a. g
VCCQ Input/output supply voltage −0.6 4 V
5 c* Q. H* n( i! G! v+ ], Y# NVID Identification voltage −0.6 13.5 V
' T" R- {; k, T3 u& \6 j' w. QVPPH(3) Program voltage −0.6 13.5 V7 W4 G9 r% `0 d
Features8 K8 j! m' Q$ m
7 {3 S: |# y) Q. W) P2 d■ Supply voltage
& h5 Q& Z! ]& d9 T– VCC = 2.7 to 3.6 V for Program, Erase and Read
0 k. b6 |6 f8 U2 M% F" m– VCCQ = 1.65 to 3.6 V for I/O buffers! ~" r! k- e4 J' V% V8 X
– VPPH = 12 V for Fast Program (optional)
. R0 n8 H6 A( [" r; A0 }" C* I■ Asynchronous Random/Page Read `7 o7 j1 v3 B9 m6 u# d" z
– Page size: 8 words or 16 bytes/ n' ]- V" L7 \0 X
– Page access: 25, 30 ns. I% T S; t' @. F
– Random access: 60 (only available upon customer request) or 70, 80 ns2 T6 N7 j0 ` s( \
■ Fast Program commands: Q; z; H0 w6 z z2 [
– 32 words (64-byte write buffer)
6 o3 b' M, L: p* ^. }■ Enhanced Buffered Program commands, A: t; U q) X5 h; D
– 256 words4 f1 v" r6 x2 [3 n/ b( |
■ Programming time/ I- s ^5 ]/ T7 h% M
– 16 μs per byte/word typical: L* v* v- u& ]. O7 W$ c4 Y
– Chip program time: 5 s with VPPH and 8 s without VPPH
9 a; P1 \" l2 y. ]5 }■ Memory organization
0 n. c7 c) o3 i4 E, r3 z. s) j– M29128GH/L: 128 main blocks, 128 Kbytes/64 Kwords each( a( K5 N* `$ c7 G+ C( @
■ Program/Erase controller+ b+ F, }6 k# m* e( |
– Embedded byte/word program algorithms5 f3 H" ~: H- L) P0 {" {
■ Program/ Erase Suspend and Resume, \, j- T9 ]/ y# |2 d | e( r3 k
– Read from any block during Program Suspend8 a- f, O9 ^# M& k
– Read and Program another block during
( j! D( h0 M/ h: ~" Z5 |Erase Suspend
$ d# k2 c3 t: I: z■ Unlock Bypass/Block Erase/Chip Erase/Write to Buffer/Enhanced Buffered Program commands
7 U$ @& m5 g: }( T5 g( V– Faster Production/Batch Programming; J& q+ t5 l" C! z- G( m% ^
– Faster Block and Chip Erase
$ s6 A3 ?* O# |& W■ VPP/WP pin for Fast Program and Write: protects first or last block regardless of block protection settings2 X8 q4 Z2 l# j: y: a' M
■ Software protection:
$ M" {' R4 F( ]$ {8 }# M* @) r– Volatile protection" ~4 Q! d6 r3 B U& a5 @% V
– Non-volatile protection
3 P) H! T: |3 ]1 n– Password protection
2 L+ }2 w& m: I■ Common Flash interface% R* M) @/ }: ]8 @3 R
– 64 bit security code( K4 c- q6 K; V! _1 k u
■ 128 word extended memory block
9 x7 f, y- h* Z$ L7 I/ w– Extra block used as security block or to store additional information5 i! S, ^+ B; h! ]
■ Low power consumption
; w8 i! B6 D0 _9 E: O– Standby and automatic standby
' m/ `7 b V" A% T■ Minimum 100,000 Program/Erase cycles per block$ t( H' M1 E% Q) c4 [0 ^& ]) W
■ ECOPACK® packages |
/1 
44152102000001
发表于 2009-11-11 17:04:34
