wyfme 发表于 2008-12-25 08:10:15

   怎么从编号看内存容量啊

MINE 发表于 2008-12-25 15:38:58

不知道FLASH能不能换。

yf3899 发表于 2008-12-25 16:44:41

高手啊,ram都能换!

天涯 发表于 2008-12-25 20:16:49

14楼这个超强内存条啊.便宜又实惠,不错的选择.

天涯 发表于 2008-12-26 19:27:05

21楼的朋友,我收集的一点数据资料8Mx16 SDR IS42S16800D      3.3V 4K 16M70ns ISSI
8Mx16 SDR IS42S16800E      3.3V 4K 16M70ns

8Mx16 SDR M12L128168A-7TG3.3V 4K 16M70ns ESMT
8Mx16 SDR M12L2561616A-7TG 3.3V 4K 32M70ns

HYB39SC128160FE-7 128Mb, 8Mx16, SDR-143 3-3-3 PG-TSOPII-54
HYI39SC128160FE-7 128Mb, 8Mx16, SDR-143 3-3-3 PG-TSOPII-54

samsung
K 4 X X X X X X X X-XXXXXXX   sdr
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
K 4 S 2 8 1 6 3               70
____________________________________________________________

8Mx16 SDR EDS1216AHTA      3.3V 4K 16M75ns

HY5DU121622BTx16 2.5V 8K Ref. D43/J/K/H/L Normal Power TSOP EOL    512Mb/8=64M DDR1
HY5DU121622BTP x16 2.5V 8K Ref. D43/J/K/H/L Normal Power TSOP EOL
HY5DU121622CTP x16 2.5V 8K Ref. D43/J/K/H/L Normal Power TSOP EOL
------------------------------------------------------------------
HY57V281620FTP   x16 3.3V 5/6/7/H Low PowerTSOP                  128Mb/8=16M SDR
HY57V561620FT(P) x16 3.3V 6/H   Normal/Low TSOP                  256Mb/8=32M

Infineon
HYB39S128160 128Mb       x 16 3.3V
HY39S128400128Mb32 M x 43.3V
HY39S128800128Mb16 M x 83.3V

etron
256Mb        16Mx16        EM63A165TS                6, 7        3.3V, LVTTL        54-pin TSOPII
128Mb        8Mx16        EM639165TS/VM                6, 7        3.3V, LVTTL        54-pin TSOPII
128Mb        8Mx16        EM639165TS/VM-XXI        6, 7        3.3V, LVTTL        54-pin TSOPII

qimonda
HYB39SC256160FE-7 256Mb, 16Mx16, SDR-143 3-3-3 PG-TSOPII-54
HYB39SC256160FE-6 256Mb, 16Mx16, SDR-166 3-3-3 PG-TSOPII-54
HYI39SC256160FE-7 256Mb, 16Mx16, SDR-143 3-3-3 PG-TSOPII-54
HYI39SC256160FE-6 256Mb, 16Mx16, SDR-166 3-3-3 PG-TSOPII-54
HYB39SC128160FE-7 128Mb, 8Mx16, SDR-143 3-3-3 PG-TSOPII-54
HYI39SC128160FE-7 128Mb, 8Mx16, SDR-143 3-3-3 PG-TSOPII-54
HYI39SC128160FE-6 128Mb, 8Mx16, SDR-166 3-3-3 PG-TSOPII-54
HYB39SC128160FE-6 128Mb, 8Mx16, SDR-166 3-3-3 PG-TSOPII-54
HYB39S512160AT-7.5 512Mb, 32M x 16, PC133 3-3-3 P-TSOPII-54
HYB39S512160AE-7.5 512Mb, 32M x 16, PC133 3-3-3 PG-TSOPII-54
HYB39S128160AT-7.5 128Mb, 8M x 16, PC133 3-3-3 P-TSOPII-54
HYB39S128160AE-7.5 128Mb, 8M x 16, PC133 3-3-3 PG-TSOPII-54
------------------------------------------------------------
HYI25D512160DT-5 512Mb, 32Mx16, DDR400 3-3-3 P-TSOPII-66
HYI25D512160DE-5 512Mb, 32Mx16, DDR400 3-3-3 PG-TSOPII-66
HYB25D512160CE-5 512Mb, 32Mx16, DDR400 3-3-3 PG-TSOPII-66


samsung
K 4 X X X X X X X X-XXXXXXX   sdr
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
K 4 S 2 8 1 6 3               70
K 4 S 2 8 1 6 3               75
    ^
K 4 X X X X X X X X-XXXXXXX   ddr
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
K 4 H 5 1 1 6 3               
K 4 H 5 1 1 6 3 2    -u         
    ^



samsung
K 4 X X X X X X X X-XXXXXXX   
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
K 4 S 2 8 1 6 3               70
K 4 S 2 8 1 6 3               75

1. Memory (K)
2. DRAM : 4
3. Small Classification
S : SDRAM
4~5. Density,Refresh
16 : 16M, 2K/32ms
28 : 128M, 4K/64ms
51 : 512M, 8K/64ms
56 : 256M, 8K/64ms
64 : 64M, 4K/64ms
1G : 1G, 8K/64ms
6~7. Organization
04 : x4
06 : x4 Stack
07 : x8 Stack
08 : x8
16 : x16
32 : x32
8. Bank
2 : 2 Bank
3 : 4 Bank
9. Interface, VDD, VDDQ
2 : LVTTL, 3.3V, 3.3V
L : LVCMOS, 2.5V, 2.5V
10. Generation
11. “—”
12. Package
N : STSOP2
T : TSOP2
U : TSOP2 (Lead-Free)
L : TSOP2 (Lead-Free & Halogen-Free)
V : STSOP2 (Lead-Free)
Note : In a special case, TSOP2 package code “-U” of
SDR 256Mb J-die/128Mb K-die and sTSOP2 “V” of
256Mb J-die stand for Lead-free and Halogen free,
13. Temp, Power
C : Commercial, Normal ( 0℃ ~ 70℃ )
L : Commercial, Low ( 0℃ ~ 70℃ )
I : Industrial, Normal ( -40℃ ~ 85℃)
P : Industrial, Low ( -40℃ ~ 85℃)
E : Extended, Normal ( -25℃ ~ 85℃)
N : Extended, Low ( -25℃ ~ 85℃)
14~15. Speed ( Wafer / Chip Biz / BGD : 00 )
50 : 5ns
55 : 5.5ns
60 : 6ns
70 : 7ns
75 : 7.5ns, PC133
80 : 8ns
-------------------------------------------------------------
K 4 X X X X X X X X-XXXXXXX
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
1. Memory (K)
2. DRAM : 4
3. Small Classification
H : DDR SDRAM
4~5. Density, Refresh
64 : 64Mb, 4K/64ms
28 : 128Mb, 4K/64ms
51 : 512Mb, 8K/64ms
56 : 256Mb, 8K/64ms
1G : 1Gb, 8K/64ms
2G : 2Gb, 8K/64ms
6~7. Organization
04 : x4
08 : x8
16 : x16
32 : x32
06 : x4 Stack
07 : x8 Stack
8. Bank
3 : 4Bank
9. Interface, VDD, VDDQ
8 : SSTL-2, 2.5V, 2.5V
10. Generation
11. "─"
12. Package
T : TSOP2
U : TSOP2 (Lead Free)
L : TSOP2 (Lead-Free & Halogen-Free)
N : sTSOP2
V : sTSOP2 (Lead Free)
6 : sTSOP2 (Lead-Free & Halogen-Free)
G : FBGA
Z : FBGA (Lead Free)
H : FBGA (Lead-Free & Halogen-Free)
F : FBGA for DDR 64Mb/128Mb
(Lead-Free & Halogen-Free)
13. Temp, Power
C : Commercial, Normal ( 0℃ ~ 70℃ )
L : Commercial, Low ( 0℃ ~ 70℃ )
I : Industrial, Normal ( -40℃ ~ 85℃)
P : Industrial, Low ( -40℃ ~ 85℃)
14~15. Speed (Wafer/Chip Biz/BGD: 00)
CC : DDR400 ( 200MHz @ CL=3, tRCD=3, tRP=3 )
B3 : DDR333 ( 166MHz @ CL=2.5, tRCD=3, tRP=3 )
AA : DDR266 ( 133MHz @ CL=2, tRCD=2, tRP=2 )
A2 : DDR266 ( 133MHz @CL=2, tRCD=3, tRP=3 )
B0 : DDR266 ( 133MHz @ CL=2.5, tRCD=3, tRP=3 )
=====================================================================================
HY5DU121622DTP-D43 64M

sys0719 发表于 2008-12-26 21:18:02

强。。。。。!

6331805 发表于 2008-12-27 12:06:35

动手能力真强!忍不住,再顶一下!

mzdeng 发表于 2008-12-28 12:18:02

手工费的话到修电子那焊一下也就10元,现在是内存比较少见到啊,要不我去买条KST 512M DDR400的来拆,我用完一个后还剩下7个有谁要的吗?10元一个吧,如果有人要的话我就去买条来焊,不然我自己一个人用的话,80焊个内存感觉没什么意思一样。。

wyfme 发表于 2008-12-28 17:39:16

内存到了明天去换嘎嘎自己没风枪哦

wyfme 发表于 2008-12-28 19:31:09

昏迷啊一样的编码 焊上去居然是16M的内存我可是一个普通烙铁焊的啊   要晕死哦
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