我准备刷新版大亚DB120-B1(7月的Board)，硬件版本V3.1, 软件V7.1,只有一个USB,FLASH就是这个M29W128GH。不知道行不行啊？刷不带CFE的。哪个刷过的给个建议！
线到了。。。准备开搞。。。
今天用brjtag 1.8c刷ST M29W128GH新flash芯片的rg100a，指令如下：
1、输入 brjtag -probeonly /erasechip /fc:94 全片擦除flash芯片数据
2、输入 brjtag -flash:tfe /fc:94写入hugebird提供的USR9113M29W128GH 的改版cfe，
遇到一个问题是写入速度非常非常慢，20多分钟才写入1%并且好像停在那里，很久才动一下，
显示如下，不知是机器问题还是brjtag程序问题？
===============================================
Broadcom EJTAG Debrick Utility v1.8c-hugebird
===============================================
Probing bus ... Done
Instruction Length set to 5
CPU assumed running under BIG endian
CPU Chip ID: 00000110001101011000000101111111 (0635817F)
*** Found a Broadcom manufactured BCM6358 REV 01 CPU ***
- EJTAG IMPCODE ....... : 00000000100000011000100100000100 (00818904)
- EJTAG Version ....... : 1 or 2.0
- EJTAG DMA Support ... : Yes
- EJTAG Implementation flags: R4k MIPS16 MIPS32
Issuing Processor / Peripheral Reset ... Done
Enabling Memory Writes ... Done
Halting Processor ... <Processor Entered Debug Mode!> ... Done
Clearing Watchdog ... Done
Loading CPU Configuration Code ... Skipped
Detecting Flash Base Address...
Read MPI register value : 1f00008c
MPI register show Flash Access Base Addr : 1f000000
*** Manually Selected a ST M29W128GH Uni (16MB) from ST/Numonyx
- Flash Chip Window Start .... : 1F000000
- Flash Chip Window Length ... : 01000000
- Selected Area Start ........ : 1F000000
- Selected Area Length ....... : 00020000
*** You Selected to Flash the TFE.BIN ***
=========================
Flashing Routine Started
=========================
Total Blocks to Erase: 1
Erasing block: 1 (addr = 1f000000)...Done
Loading TFE.BIN to Flash Memory...
1% bytes = 2476
The M29W128GH and M29W128GL are 128 Mbit (8 Mb x 16 or 16 Mb x 8) non-volatile Flash memories that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6 V) supply. On power-up the memory defaults to its Read mode.
The memory array is divided into 64-Kword/128-Kbyte uniform blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Program and Erase commands are written to the command interface of the memory. An on-chip Program/Erase controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents.
The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.
Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory. They allow simple connection to most microprocessors, often without additional logic.
The M29W128GH and M29W128GL support Asynchronous Random Read and Page Read from all blocks of the memory array. The devices also feature a Write to Buffer Program capability that improves the programming throughput by programming in one shot a buffer of 32 words/64 bytes. The Enhanced Buffered Program feature is also available to speed up the programming throughput, allowing to program 256 words in one shot (only in x 16 mode). The VPP/WP signal can be used to enable faster programming of the device.
The M29W128GH and M29W128GL have an extra block, the extended block, of 128 words in x 16 mode or of 256 bytes in x 8 mode that can be accessed using a dedicated command.
The extended block can be protected and so is useful for storing security information.
However the protection is not reversible, once protected the protection cannot be undone.
The device features different levels of hardware and software block protection to avoid unwanted program or erase (modify):
● Hardware protection:
– The VPP/WP provides a hardware protection of the highest and lowest block on the M29W128GH, M29W128GL, respectively.
● Software protection:
– Volatile protection
– Non-volatile protection
– Password protection
The M29W128GH and M29W128GL are offered in TSOP56 (14 x 20 mm), and TBGA64 (10 x 13 mm, 1 mm pitch), packages. The memories are delivered with all the bits erased (set to ‘1’).
Maximum Ratings
Symbol Parameter Min Max Unit
TBIAS Temperature under bias -50 125 ℃
TSTG Storage temperature -65 150 ℃
VIO Input or output voltage(1)(2) −0.6 VCC + 0.6 V
VCC Supply voltage −0.6 4 V
VCCQ Input/output supply voltage −0.6 4 V
VID Identification voltage −0.6 13.5 V
VPPH(3) Program voltage −0.6 13.5 V
Features
■ Supply voltage
– VCC = 2.7 to 3.6 V for Program, Erase and Read
– VCCQ = 1.65 to 3.6 V for I/O buffers
– VPPH = 12 V for Fast Program (optional)
■ Asynchronous Random/Page Read
– Page size: 8 words or 16 bytes
– Page access: 25, 30 ns
– Random access: 60 (only available upon customer request) or 70, 80 ns
■ Fast Program commands
– 32 words (64-byte write buffer)
■ Enhanced Buffered Program commands
– 256 words
■ Programming time
– 16 μs per byte/word typical
– Chip program time: 5 s with VPPH and 8 s without VPPH
■ Memory organization
– M29128GH/L: 128 main blocks, 128 Kbytes/64 Kwords each
■ Program/Erase controller
– Embedded byte/word program algorithms
■ Program/ Erase Suspend and Resume
– Read from any block during Program Suspend
– Read and Program another block during
Erase Suspend
■ Unlock Bypass/Block Erase/Chip Erase/Write to Buffer/Enhanced Buffered Program commands
– Faster Production/Batch Programming
– Faster Block and Chip Erase
■ VPP/WP pin for Fast Program and Write: protects first or last block regardless of block protection settings
■ Software protection:
– Volatile protection
– Non-volatile protection
– Password protection
■ Common Flash interface
– 64 bit security code
■ 128 word extended memory block
– Extra block used as security block or to store additional information
■ Low power consumption
– Standby and automatic standby
■ Minimum 100,000 Program/Erase cycles per block
■ ECOPACK® packages
The M29W128GH and M29W128GL are 128 Mbit (8 Mb x 16 or 16 Mb x 8)
"M29128GH/L: 128 main blocks, 128 Kbytes/64 Kwords each"
For M29W128G: manufacture ID: 0020h, device ID: 227Eh / 2221h / 2201h
(M29W128GH) or 2200h. (M29W128GL)
不 太 理 解